发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an internal potential generating circuit capable of reducing power consumption while maintaining high-speed operation. SOLUTION: First and second buffer circuits 2042 and 2052 generate first and second reference potentials Vref1B and Vref2B. While sense operation is not performed, the level of a reference potential VrefM is turned into potential Vref1B by a switching circuit 2100 and while sense operation is performed, that level is turned into lower potential Vref2B. The buffer circuits 2042 and 2052 are controlled by a signal PUM so as to increase a through current just for a prescribed period when starting and ending the sense operation.
申请公布号 JP2001035160(A) 申请公布日期 2001.02.09
申请号 JP19990356089 申请日期 1999.12.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 KONO TAKASHI
分类号 G11C11/407;G11C11/403;G11C11/409;(IPC1-7):G11C11/407 主分类号 G11C11/407
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