| 摘要 |
PROBLEM TO BE SOLVED: To provide a jig for a semiconductor manufacturing device which can be reproduced through etching, without giving damages. SOLUTION: A jig 1 is subjected to an initial cleaning, before being used in an LPCVD device. Then, a TEOS-NSG film 2, which has higher etching speed than that of a nitride film 3 to be formed on a semiconductor substrate, is coated on the surface of the jig 1 in advance. When a film is formed on the semiconductor substrate by using a jig 1 thus coated, although a nitride film 3 is formed on the substrate is attached thereon and deposited on the jig 1 as well, however when this jig is subjected to wet etching, the TEOS-NSG film 2 under the nitride film 3 is exposed in a portion, among the nitride film 3 which is thin. Since the TEOS-NSG film has an etching rate higher than that of the nitride film 3, the TEOS-NSG film is etched with priority. When the TEOS-NSG film 2 is removed, the nitride film 3 remaining on the TEOS- NSG film 2 is peeled and removed at the same time.
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