| 摘要 |
PROBLEM TO BE SOLVED: To provide the modifying means of a process flow contemplated from the aspect of a cleaning of the chamber wall and a plasma producing condition contemplated from the aspect of a control of a plasma chemistry. SOLUTION: A dry etching method comprises a treating process, wherein with treatment gas introduced in a sample treating chamber exhausted in a vacuum, a plasma is generated in the treating chamber by feeding high-frequency power to the treating chamber and a sample to be processed in the treating chamber is treated by etching by exposing the surface of the sample to the plasma, the treating process is interrupted in each constant treating time to split the treating process into a plurality of treating processes and a cleaning process is inserted between a plurality of treating processes by exposing the treating chamber to the oxygen-containing plasma. Hereby, deposits on the inner wall of the treating chamber are reduced less than a constant level and the effect of a change in a plasma chemistry can be eliminated. For this, a prescribed relation is obtained between the depth of etching and the thickness of a residual resist and a high-accuracy etching eliminated a change in a state of the inner wall, which is generated with an elapse of an etching time, can be realized. |
