发明名称 |
CRYSTALLINE SEMICONDUCTOR THIN FILM AND MANUFACTURE THEREOF AND SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique for forming a single-crystal semiconductor thin film or a substantially single-crystal semiconductor thin film. SOLUTION: An amorphous semiconductor thin film is subjected to heat treatment, so as to obtain a crystalline semiconductor thin film 102. After the crystalline semiconductor thin film 102 is irradiated with ultraviolet light or infrared light, heat treatment is performed at 900-1,200 deg.C in a reducing atmosphere. By this process, the surface of the crystalline semiconductor thin film 104 is markedly planarized and defects in grain boundaries or crystal grains are eliminated, and thus a single-crystal semiconductor thin film or a substantially single-crystal semiconductor thin film is obtained.
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申请公布号 |
JP2001035788(A) |
申请公布日期 |
2001.02.09 |
申请号 |
JP19990199656 |
申请日期 |
1999.07.13 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;OTANI HISASHI;TAKANO YOSHIE |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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