| 摘要 |
PROBLEM TO BE SOLVED: To realize a method of manufacturing a semiconductor device having metal electrodes whereby Cu contamination of the side walls of fine openings and growth of voids in the metal electrodes are avoided when burying the metal electrodes in the fine openings on a Cu wiring. SOLUTION: A silicon nitride film 5 and a layer insulation film 6 are deposited on a Cu wiring 3 formed on a semiconductor substrate 1. Openings are formed into this film 6 to form contact holes, with leaving the silicon nitride film 5 on the opening bottoms. After expanding the entrances of the openings by the physical etching, etc., the left film 5 is removed and conductive members are buried in the openings. Thus it is possible to chamfer the opening tops, without depositing Cu to the opening side walls, even if the lower layer is a Cu wiring, hence avoid diffusing Cu atoms and form metal electrodes contg. no voids.
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