| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a photovoltaic element which can improve the output characteristics of a solar cell, open voltage and fill factor, by providing on a pi boundary face or an ni boundary face a buffer semiconductor layer to prevent the thermal diffusion of dopant of a (p) layer or an (n) layer during film formation. SOLUTION: One assumes that a solar cell 101 is composed of a conductive substrate 102, a lower electrode 103, an n-type semiconductor layer 104, n/i buffer semiconductor layers 105a and 105b, an i-type semiconductor layer 106, p/i buffer semiconductor layers 107a and 107b, a p-type semiconductor layer 108, a transparent electrode 109, a current collecting electrode 110, and an extraction electrode 111, and a light enters via the transparent electrode 109. Therefore, a buffer semiconductor layer is provided on a pi boundary face or an ni boundary face to prevent effectively the thermal diffusion of dopant of a (p) layer or an (n) layer in an (i) layer during film formation, thereby improving the output characteristic of the solar cell, especially the open voltage and fill factor.</p> |
