| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, where a parasitic diode whose anode is an ion implantation resistor and whose cathode is an epitaxial region will not occur even if the power voltage is different, and moreover which operates so that a startup sequence circuit can be dispensed with at the outside. SOLUTION: This device is composed of an ion implantation resistance region 50, comprising an n-type epitaxial region 4 and a plurality of p-type ion implantation resistors 6, a voltage input terminal CN1 provided within the epitaxial region 4, an ion implantation resistance region 51 comprising an n-type epitaxial region 5 and a plurality of p-type ion implantation resistance regions 7, a voltage input terminal CN2 provided within the epitaxial region 5, a voltage input terminal CN3 for electrically separating the ion implantation resistance region 50 and the ion implantation resistance region 51, and a p-type substrate 8. Moreover, this has a power source 1 for supplying a positive voltage, a diode 9 where an anode is connected, a power source 2 for supplying a positive voltage, a diode 10 where an anode is connected, a switch 11 for connecting the anode of the diode 9 with the cathode, and a switch 12 for connecting the anode of the diode 10 with the cathode.
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