| 摘要 |
<p>PROBLEM TO BE SOLVED: To accelerate the specification of a defective cell at the time of write or erasure as a verified result concerning the non-volatile semiconductor memory device for performing write verify operation or erasure verify operation with write operation or erase operation. SOLUTION: The non-volatile semiconductor memory device having plural memory cells 101 C has a buffer circuit group 102 for storing data to be simultaneously written in the memory cells 101 C or to be erased while dividing them into N pieces (N is a required natural number) corresponding to the selection of a word line WL and circuits 103-107 for verifying the write data for each of N divided units and outputting the verified result to the outside. Since data can be dividedly outputted, the defective cell, to which write or erasure is not sufficiently performed, can be specified by investigating the range of 1/N.</p> |
