发明名称 AlGaInP LIGHT EMITTING DIODE PROVIDED WITH WINDOW LAYER
摘要 PROBLEM TO BE SOLVED: To improve the ohmic resistance property of an oxide window layer and make a light emitting efficiency superior by providing a metal thin-film layer between a light emitting part, including a specific layer and a window layer including an oxide layer, and making the metal thin-film layer and window layer in contact with each other. SOLUTION: A thin film 106 made of Ni is adhered to the surface of an n-type (Al0.7Ga0.3)0.5In0.5P upper clad layer 105 generally by vacuum evaporation method. A widow layer 107 formed of n-type conductive iridium/tin oxide(ITO) film is jointed with the metallic thin film 106. The transparent conductive window layer 107 is composed by the high-frequency magnetron sputtering method of the ITO of about 9×10-4 Ω.cm for specific resistance. An insulation film made of silicon nitride having a smaller refractive index than the ITO is laminated as a surface protective film 108 of the oxide window layer 107 on the surface of the window layer 107. Since the metal thin film 106 is provided, an ohmic connection between the upper clad layer 105 and window layer 107 becomes appropriate. Therefore, the forward voltage is reduced on the average.
申请公布号 JP2001036130(A) 申请公布日期 2001.02.09
申请号 JP19990204500 申请日期 1999.07.19
申请人 SHOWA DENKO KK 发明人 TAKEUCHI RYOICHI;NABEKURA WATARU;UDAGAWA TAKASHI
分类号 H01L33/14;H01L33/28;H01L33/30;H01L33/42;H01L33/44 主分类号 H01L33/14
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