| 摘要 |
PROBLEM TO BE SOLVED: To avoid expanding a seam in planarizing a deposited film having seams or in etching it with chemicals. SOLUTION: In planarizing a first silicon oxide film 15 having a seam 16 by CMP or etching it with chemicals, the seam is filled with an osmotic liq. 17 having a lower surface tension than water. Before the osmotic liq. 17 dries, the second silicon oxide film 15 is planarized or etched with chemicals to expose the surface of a Si substrate 11.
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