| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound heterobipolar transistor of a structure, wherein the recombination between a base layer and an emitter layer is suppressed and a reduction in the amplification factor of a current can be prevented without increasing the junction capacitance between a base and an emitter and a leakage current so much, and the manufacturing method of the transistor. SOLUTION: A compound heterobipolar transistor is constituted into a structure, wherein an n-type semiconductor collector layer region 13, a p-type semiconductor base region 14 and an n-type semiconductor emitter layer region 15, which has a wide forbidden band width and is formed in a mesa form, are laminated on a semi-insulative GaAs substrate 11 in the mentioned order, and the transistor has base contact regions 20 changed into p-type regions by a diffusion of p-type impurities from the base layer region on the outside of a mesa-shaped region into the regions 15 and 13.
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