MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent degradation in breakdown voltage by exposing part of a first wiring layer where a recess is formed, and forming a dielectric film on the first wiring layer and then a second wiring layer on the dielectric film. SOLUTION: A silicon dioxide film 2 as an insulating film is formed on a semiconductor substrate 1, and a titanium nitride film 3, an aluminum film 4, and a titanium nitride film 5 are formed on the silicon dioxide film 2 in this order to form a first lower wiring layer. After the wiring layer is patterned, a first insulating film 6 is formed, and the first insulating film is etched to form a recess 11. The recess 11 is filled with a second insulating film 7, a third insulating film is stacked thereon, and photoresist is formed thereon. After the photoresist is patterned, the photoresist is removed, and a dielectric film 13 is formed to form a second upper wiring layer 14.