摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which can realize speed up in the operating speed of a MOS transistor and enhancements in current drive capability. SOLUTION: This semiconductor device comprises a silicon substrate 1, an element isolation insulating film 2, a gate structure formed selectively on a main plane of the silicon substrate 1, and a sidewall 6 formed on a side plane of the gate structure. The gate structure has a laminated structure, obtained by laminating in this order a gate insulation film 3 composed of a silicon oxide film, a gate electrode 4 mode of polysilicon, and a Co silicide layer 5 composed of a silicon oxide film. Furthermore, this semiconductor device comprises a source/drain region 7 selectively formed in the main plane of the silicon substrate 1, and a Co silicide layer 8 formed, so as to extend from the upper plane of the source/drain region 7 exposed from the sidewall 6 and the gate structure downward of an end part of the gate structure, in the principal plane of the silicon substrate 1.
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