发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor device which can realize speed up in the operating speed of a MOS transistor and enhancements in current drive capability. SOLUTION: This semiconductor device comprises a silicon substrate 1, an element isolation insulating film 2, a gate structure formed selectively on a main plane of the silicon substrate 1, and a sidewall 6 formed on a side plane of the gate structure. The gate structure has a laminated structure, obtained by laminating in this order a gate insulation film 3 composed of a silicon oxide film, a gate electrode 4 mode of polysilicon, and a Co silicide layer 5 composed of a silicon oxide film. Furthermore, this semiconductor device comprises a source/drain region 7 selectively formed in the main plane of the silicon substrate 1, and a Co silicide layer 8 formed, so as to extend from the upper plane of the source/drain region 7 exposed from the sidewall 6 and the gate structure downward of an end part of the gate structure, in the principal plane of the silicon substrate 1.
申请公布号 JP2001036080(A) 申请公布日期 2001.02.09
申请号 JP19990210208 申请日期 1999.07.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 SAYAMA HIROKAZU;ODA SHUICHI;NISHIDA MASAO;OISHI TOSHIYUKI
分类号 H01L29/78;H01L21/265;H01L21/28;H01L21/285;H01L21/336;H01L29/417;H01L29/43;(IPC1-7):H01L29/78 主分类号 H01L29/78
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