| 摘要 |
PROBLEM TO BE SOLVED: To make a Hall element applicable to a current measuring instrument, electric power measuring instrument, etc., by suppressing fluctuations of the input/output resistance and product sensitivity characteristic of the element with respect to time change by forming a conductor layer on an insulating layer coating a magnetism sensitive layer. SOLUTION: In a Hall element, a GaAs magnetism sensitive layer 2 is formed by implanting ions into the surface of a semi-insulating GaAs substrate 1 and etching the implanted layer in a cross-like state. Then a silicon oxide insulating layer 3 is formed on a conductor layer 5 so as to completely cover the magnetic sensitive layer 2 by the plasma CVD method. In addition, the conductor layer 5 is formed on the insulating layer 3 so that the surface of the layer 3 is made equipotential and the of infiltration of impurity ions is prevented. Consequently, the input-output resistance and product sensitivity characteristic of the Hall element can be stabilized. In order to improve the effect, moreover, the conductor layer 5 is connected to one of a plurality of electrodes 4a-4d formed on the magnetism sensitive layer 2.
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