| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect type head having a structure in which a lower insulation layer between the lower shield layer in a reproduction head and an MR sensor, and an upper insulation layer between the upper shield layer and the MR sensor are protected against electrostatic breakdown. SOLUTION: In a magnetoresistive effect type head, an upper insulation layer 51 sandwiched by an MR sensor 30 and an upper shield layer 60 is formed of a silicon nitride film or a silicon oxide nitride film at a part touching the MR sensor 30 and at a part touching the upper shield layer 60. Alternatively, a lower insulation layer 21 sandwiched by the MR sensor 30 and a lower shield layer 10 is formed of a silicon nitride film or a silicon oxide nitride film at a part touching the MR sensor 30 and at a part touching the lower shield layer 10. Since a metal atom is not captured easily at the central part of the upper insulation layer 51 or the lower insulation layer 21, resistance of the insulation layer against electrostatic breakdown can be enhanced.
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