| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacture of a semiconductor device which is easy for planarization, by simplifying the manufacturing process. SOLUTION: This manufacturing method has a step of forming a lower electrode 11 for a capacitor and a first wiring 11 at a time within a second interlayer film 7, among a interlayer films made on the semiconductor substrate 1 having a semiconductor element, a step or forming a trench for an upper electrode 15 for the capacitor and a trench for a second wiring 13 within a third interlayer film 8 and a fourth interlayer film 9, and a step for forming an insulating film 14 in the trench of the upper electrode 15 for the capacitor and forming the upper electrode 15 for the capacitor and the second wiring 13, in the trench 13 of the second wiring 13 and the trench of the upper electrode 15 of the capacitor at a time. |
