| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacture for a MOS-type semiconductor device which restricts shift of threshold at manufacturing, and supplies MOSFET applicable to an operational amplifier product. SOLUTION: Channel ions are implanted in a semiconductor substrate 11 enclosed with an element isolation insulating film 12 for obtaining a desired threshold (13), thereby forming a gate oxide film 14. A prescribed gate electrode 15 is patterned on the gate oxide film 14. Thereafter, impurity ions are implanted with this gate electrode 15 as a mask, thereby forming a source/drain diffusion layer 16. Next, as shown in (Fig. c), a lamp-annealing is performed. Thus, a source/drain diffusion layer 16 is diffused so as to activate, and also damages to the gate oxide film 14 are relaxed in a preceding ions implantation process.
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