发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To improve convenience in the auto-refresh mode of a synchronous DRAM or the like, to successively activate plural banks at prescribed time intervals without being affected by the internal dispersion of delay time and to further suppress a power supply noise at the time of refresh operation in the synchronous DRAM or the like. SOLUTION: Concerning the synchronous DRAM provided with four banks BANK0-BANK3 and the auto-refresh mode, for example, at the time of auto- refresh operation, the banks BANK0-BANK3 are successively activated at prescribed time intervals one by one, for example. Besides, the time interval to successively activate these banks is set for the unit of the cycle of a clock signal CLK supplied from the outside and the combination or time interval of banks to be successively activated can be arbitrarily designated by a mode register set command, for example.
申请公布号 JP2001035152(A) 申请公布日期 2001.02.09
申请号 JP19990208122 申请日期 1999.07.22
申请人 HITACHI LTD 发明人 TAKAHASHI TSUGIO;KAJITANI KAZUHIKO;KIMURA KATSUTAKA;SEKIGUCHI TOMONORI;TAKEMURA RIICHIRO
分类号 G11C11/406;G11C11/403;G11C11/407;(IPC1-7):G11C11/406 主分类号 G11C11/406
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