发明名称 PATTERN FORMATION AND CHARGED PARTICLE BEAM EXPOSURE SYSTEM
摘要 PROBLEM TO BE SOLVED: To enhance positional accuracy of pattern exposure by accurately correcting a beam drift, while preventing reduction in the throughput. SOLUTION: A fluorescence 211, issued from an fluorescent substance film on a substrate 202 irradiated with an electron beam 203 based on one-irradiation position design data, is reflected by a inflecting mirror 212, guided to an imaging optical system 213, and then imaged on an image pick-up element 214. On the basis of an image signal S output from the element 214, a beam position computing means 215 finds an actually measured value De of the irradiation position of the electron beam 203, and finds a shift of the actually measured value De from a single irradiation position design data as a beam drift amountΔD. A deflection position computing means 208 corrects for the beam drift amountΔD, to compute a deflected position data Dd of the beam 203 corresponding to the next irradiation position design data.
申请公布号 JP2001035769(A) 申请公布日期 2001.02.09
申请号 JP19990204176 申请日期 1999.07.19
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 TAKENAKA HIROSHI
分类号 H01L21/027;G03F7/20;G03F9/00;(IPC1-7):H01L21/027 主分类号 H01L21/027
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