发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory which can examine whether a burn-in test and the like are performed by appropriate conditions or not for each semiconductor memory. SOLUTION: This device is provided with a high voltage detecting circuit 42 detecting that test voltage at the time of burn-in test exceeds the prescribed voltage, a holding circuit 52 holding a detected result, and an output circuit 54 outputting holding contents of the holding circuit 52 to the outside. It can be understood whether internal power source voltage internally generated is made appropriate value or not by making observing test voltage as internal power source voltage. Preferably, a range of voltage can be specified by providing a high voltage detecting circuit detecting plural different voltage and a holding circuit holding corresponding detected result. Further, also temperature conditions can be verified by incorporating a high temperature detecting circuit.
申请公布号 JP2001035193(A) 申请公布日期 2001.02.09
申请号 JP19990202882 申请日期 1999.07.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUWA MASATO
分类号 G06F12/16;G01R31/28;G06F11/24;G11C11/401;G11C29/00;G11C29/06 主分类号 G06F12/16
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