发明名称 SOLID-STATE IMAGE PICKUP DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a solid-state image pickup device capable of acquiring correction data of each pixel output when an object is photographed without preliminarily irradiating the object with uniform light. SOLUTION: Threshold voltage of a MOS transistor T1 of each pixel is measured to suppress fluctuation of output current to be caused by the threshold voltage of the MOS transistor T1 in a pixel and it is defined as the correction data. A MOS transistor T2 is turned on to obtain the correction data, DC voltage VRB is applied on a gate of the MOS transistor T1, a MOS transistor T3 is turned off and connection between gates of MOS transistors T1 and T4 is cut off. Next, afterϕVPS is turned to low voltage once, a negative electric charge is stored in the MOS transistor T1 by increasing it up to the voltage approximate to the DC voltage VPD. The generated voltage is applied to the gate of the MOS transistor T4 by the negative electric charge and when a MOS transistor T5 is turned on, the output current is supplied to an output signal line 6 based on the voltage applied to the gate of the MOS transistor T4.
申请公布号 JP2001036822(A) 申请公布日期 2001.02.09
申请号 JP19990207411 申请日期 1999.07.22
申请人 MINOLTA CO LTD 发明人 HAGIWARA YOSHIO
分类号 H01L27/146;H01L31/10;H04N5/335;H04N5/355;H04N5/365;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H04N5/335 主分类号 H01L27/146
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