| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can accurately set nodes at inner power source potential to external test potential. SOLUTION: In a SDRAM, a detector 17 gives a high level of signalϕto a latch circuit 18, according to a pad 11 being a given test potential higher by a prescribed voltageΔV than an inner power source potential VPP=VR. The latch circuit 18 latches a high level H of signalϕ17 and holds a charge pump circuit 13 in an inactivated condition. Since the charge pump 13 is not activated, even if the pad 11 can be given a test potential lower than VPP, the node N1 at internal power potential VPP can be set accurately to the test potential.
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