| 摘要 |
PROBLEM TO BE SOLVED: To use effective p-n junction for light-emitting between superlattices of a III nitride semiconductor only of n-type by containing a plurality of superlattices, consisting of one out of intrinsic semiconductor, n-type of III nitride semiconductor and an alloy. SOLUTION: A sapphire substrate 11 is provided, and a buffer layer 10 consisting of aluminum nitride(AlN) is formed thereon. An n-clad contact layer 5 consisting of n-AlN is laminated thereon. Silicon(Si) is doped to the n-clad contact layer 5. By causing epitaxially growth on the n-clad contact layer 5, a shallow sub-band superlattice 3 consisting of Ga0.05Al0.95N/AlN is formed. The sub-band superlattice 3 is constituted by a quantum well 8 consisting of undoped four layers of Ga0.05Al0.95N and a barrier 9 consisting of a four-layer AlN, and a sub-band superlattice 1 is epitaxially grown. The su-band superlattice 1 is constituted by a quantum well 7, consisting of undoped three layers of GaN and a barrier 6 which consists of the four-layer AlN. |
