| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode whose cost is lessened by a method, wherein a process where the top surface and side of a semiconductor chip are roughened and another process where a thin film is formed are carried out at the same time, without protecting the electrode, and to provide a method of manufacturing the same. SOLUTION: A light emitting diode is equipped with a semiconductor chip 20, which is provided with a PN junction and an N-type GaAs layer formed on its top surface and electrodes 14 and 15, which are each provided on the top surface and under surface of the semiconductor chip 20 respectively, where light is projected out from the region of the top surface of the chip 20 other than the electrode 15 and a side A. A rugged plane 17 whose surface roughness ranges from about 0.5 to 5.0 μm is provided k the region of the top surface of the chip 20 other than the electrode 15 and the side A, and an arsenic compound thin film 18 which contains semiconductor chip material is deposited on the rugged plane 17. |
