| 摘要 |
PROBLEM TO BE SOLVED: To provide a III group nitride compound semiconductor thin film which can be formed on an arbitrary substrate and a method of forming it, and a semiconductor device and a method of manufacturing it, and to provide a III group nitride compound semiconductor thin film having high crystallinity and a method of forming it, and a semiconductor device and a method of manufacturing it. SOLUTION: A polycrystalline III group nitride compound thin film 18 is formed on a substrate by sputtering at a speed of 15-200 nm/hour using a III group nitride compound target in an atmosphere of a gas plasma having a nitrogen content of 10 mol% or more. Thereafter, an excimer pulse laser L is injected onto the film 18 at an energy density of about 299 mJ/cm2 in an atmosphere of a gas having an oxygen content of 2 mol% or less, thereby removing grain boundaries, dislocations and other lattice defects present within the film 18. |
