| 发明名称 |
STRUCTURE FOR REFLECTION LITHOGRAPHY MASK AND METHOD FOR MAKING SAME |
| 摘要 |
The invention concerns a structure for a reflection lithography mask comprising a receiving support (12) whereon is fixed a reflector (11) comprising at least one layer, the reflector (11) being fixed to the receiving support (12) in reverse with respect to a manufacturing support (10) whereon it has previously been manufactured and which has been removed.
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| 申请公布号 |
WO0109680(A1) |
申请公布日期 |
2001.02.08 |
| 申请号 |
WO2000FR02176 |
申请日期 |
2000.07.28 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;ROBIC, JEAN-YVES;ASPAR, BERNARD |
发明人 |
ROBIC, JEAN-YVES;ASPAR, BERNARD |
| 分类号 |
G02B5/08;G03F1/24;H01L21/027;(IPC1-7):G03F1/14 |
主分类号 |
G02B5/08 |
| 代理机构 |
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