| 摘要 |
PROBLEM TO BE SOLVED: To obtain a diode having a high breakdown voltage and a low loss power. SOLUTION: A diode 40 is structured by laminating in the order an n-type silicon carbide layer 14, an n-type silicon layer 16, and a p-type silicon layer 18 on an n+ silicon carbide substrate 12. Two trenches 24 are formed so as to pierce a p-type silicon layer 18 and an n-type silicon layer 16, and reach the n-type silicon carbide layer 14. A trench gate 28 is embedded in each trench 24. In the diode 40, the rising voltage of a forward current of the diode is about 0.6 V which is the value of the, energy gap of silicon, and the dielectric breakdown electric field of the diode becomes about 3×106 V/cm which is the dielectric breakdown electric field of silicon carbide.
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