| 摘要 |
<p>A process for the two-step selective anodization of a semiconductor layer for forming porous silicon in particular provides the selective anodization of one or more regions of N+(+) semiconducting material inside Ζ/N?+(+)/N(-)¿-type structures for semiconductor integrated circuits, by means of a first step of constant current anodization wherein a working voltage value is determeined, and a second step of anodization with constant voltage value equal to the working voltage value determined in the constant current anodization step.</p> |
