| 摘要 |
<p>A semiconductor wafer covered with protective hard film over the surface is diced into a plurality of chips in such a manner that the protective film does not separate. Two parallel grooves are formed in dicing areas around chips on a GaAs wafer by etching. SiO2 film is deposited as surface protective film over the surface of the semiconductor wafer. As a result, the protective film bends on the border of the groove in the surface of the wafer. The wafer is diced between the two grooves with a blade, and the stresses on the protection film by the edge of the dicing blade concentrate on the bend, resulting in cracks along the bend.</p> |
