PROCESS FOR FORMING STRUCTURE WITH DIFFERENT DOPED REGIONS, SHOWING A HYPERFINE TRANSITION REGION, FOR FORMING POROUS SILICON

摘要

A process for forming structures with different conductivity showing a hyperfine transition region, for forming porous silicon for semiconductor integrated circuits, in particular provides the forming of PHI /N<+(+)>/N<(-)>-type structures for the subsequent selective anodization of one or more regions of N<+(+)> semiconducting material for forming porous silicon, so as to comprise the steps of: forming one or more regions of N<+(+)> semiconducting material inside a N<(-)> semiconducting material substrate; and growing a PHI semiconducting material epitaxial layer at a temperature lower than 900 DEG C.