| 摘要 |
<p>The present invention provides an anti-reflective coating polymer, an anti-reflective coating (ARC) composition comprising the same, methods for producing the same, and methods for using the same. The anti-reflective coating polymer of the present invention are particularly useful in a submicrolithographic process, for example, using ArF (193 nm) laser as a light source. The ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Thus, the use of ARC of the present invention results in formation of a stable ultrafine pattern that is suitable in manufacturing of 1G, and 4G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.</p> |
