| 摘要 |
An edge portion 46 of an NMOS gate electrode 44 has a different work function to its central portion and the gate electrode overlies most of the transistor structure active region. The work function variation is used to increase the threshold voltage of the device at the device edges. In this manner the central portion of the gate is used for switching the device on or off, and the edge portion of the gate provides isolation from adjacent devices. The enhanced device isolation improves the radiation tolerance of the device. The device layout may also be applied to PMOS and gated diode devices. |
