| 摘要 |
<p>A semiconductor thin film (2) is crystallized by performing the shaping step of shaping laser light emitted from a laser light source (51), thereby to define a laser beam (50) (50) which has a predetermined intensity distribution in a predetermined irradiation region, and the irradiating step of repeatedly irradiating the semiconductor thin film (2) formed over a substrate (1) beforehand, with the laser beam (50) (50) while scanning the film (2) so that irradiation regions may be overlapped. On that occasion, the laser beam (50) (50) is shaped so that the sectional intensity distribution of the laser beam (50) (50) in the irradiation region as taken in the direction of the scanning may be convex, and that the peak of the intensity distribution may lie at a position which is between the front end and rear end of the irradiation region in relation to the scanning direction and which is nearer to the front end with respect to the middle of the irradiation region. In crystallizing a semiconductor thin film of large area by overlapping regions of irradiation with a laser beam (50), the crystallinity of the film is uniformalized. <IMAGE></p> |
