GROUP III NITRIDE SEMICONDUCTOR DEVICE AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device having a high-quality group III nitride epitaxial layer with slight defects. SOLUTION: A group III element, e.g. gallium is melted and the surface of the gallium melt 2 is then nitrided to form a nitride thin film. A group III nitride is further epitaxially grown thereon to form a substrate. An epitaxial layer 5 comprising Ga1-x-yInxAlyN (x and y are each a number within the range of 0<=x<=1 and 0<=y<=1). A semiconductor element is provided in the resultant epitaxial layer 5.