发明名称 Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
摘要 An apparatus for processing a substrate in a processing system having multiple process chambers and a common transfer chamber comprises a process chamber having a process space to receive and process a substrate and a buffer chamber defining a buffer space. The buffer chamber is positioned beneath the process chamber and is configured for interfacing with a transfer chamber of a processing system for receiving a substrate to be processed. A passage is formed between the process and buffer chambers for moving a substrate between the process space and buffer space and a movable substrate stage in the buffer space is operable for moving vertically in said passage between a first position wherein the substrate is positioned in the buffer space and a second position wherein the substrate is positioned within the process space of the process chamber. A sealing mechanism is operable for sealing said passage to isolate the process chamber and a pumping system is coupled to the buffer chamber for purging the buffer space of contaminants which may leak from the process chamber to generally reduce the escape of the contaminants through the buffer chamber and into the common transfer chamber and other process chambers of a multiple chamber system.
申请公布号 US6183564(B1) 申请公布日期 2001.02.06
申请号 US19980190870 申请日期 1998.11.12
申请人 TOKYO ELECTRON LIMITED 发明人 REYNOLDS GLYN J.;HILLMAN JOSEPH T.
分类号 C23C14/56;C23C16/44;H01L21/00;H01L21/205;(IPC1-7):C23C16/00 主分类号 C23C14/56
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