| 摘要 |
Semiconductor devices of different conductivity types with optimized gate electrodes are formed on a semiconductor substrate by replacing the initial gate electrode and, optionally, the underlying gate oxide layer. Embodiments include forming a first gate electrode on a gate oxide layer and replacing the gate electrode with a second gate electrode. Optionally, a second dielectric layer can be deposited in place of or in addition to the gate oxide layer prior to depositing the second gate electrode.
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