| 摘要 |
PROBLEM TO BE SOLVED: To produce polished spheres of a single crystal silicon usable as a semiconductor circuit base, a solar cell or the like and having a high accuracy and high productivity without a strain or a residual stress on a worked surface and to provide a method for producing the polished spheres good in productivity. SOLUTION: The polished spheres W of a single crystal silicon have <=0.5 7 μm sphericity and <=0.5 nm Ra surface roughness without a crystal strain and a residual stress in 3 μm depth from the surface layer. The method for producing the polished spheres W comprises using a pair of opposite polishing plates 2 and 3 in which one or two polishing clothes are used as one or both of the polishing surface plates 2 and 3 and work rolling grooves 2a and 3a are provided therein. The silicon spheres W of the single crystal silicon are polished between the polishing plates 2 and 3. |
