发明名称 Hollow cathode for plasma doping system
摘要 A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.
申请公布号 US6182604(B1) 申请公布日期 2001.02.06
申请号 US19990427869 申请日期 1999.10.27
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 GOECKNER MATTHEW J.;FANG ZIWEI
分类号 H05H1/46;C23C14/48;H01J37/32;H01J37/34;H01L21/265;(IPC1-7):C23C16/00;C23C14/00;H01J7/24 主分类号 H05H1/46
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