发明名称 |
Hollow cathode for plasma doping system |
摘要 |
A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.
|
申请公布号 |
US6182604(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19990427869 |
申请日期 |
1999.10.27 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
GOECKNER MATTHEW J.;FANG ZIWEI |
分类号 |
H05H1/46;C23C14/48;H01J37/32;H01J37/34;H01L21/265;(IPC1-7):C23C16/00;C23C14/00;H01J7/24 |
主分类号 |
H05H1/46 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|