发明名称 |
Active matrix liquid crystal display |
摘要 |
A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film formed over a scanning electrode, an insulating layer formed on the silicon nitride film, and a semiconductor layer having a source region and a drain region formed on the insulating layer. The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer is a silicon oxide film having a thickness of 30 Å or more.
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申请公布号 |
US6184946(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19990308925 |
申请日期 |
1999.05.27 |
申请人 |
HITACHI, LTD. |
发明人 |
ANDO MASAHIKO;WAKAGI MASATOSHI;FUKAYA RITSUO |
分类号 |
G02F1/1333;A01N25/02;A01N33/12;C11D3/48;G02F1/133;G02F1/1343;G02F1/1368;H01L21/28;H01L21/336;H01L29/51;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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