发明名称 |
Non-volatile memory cell with non-trenched substrate |
摘要 |
In a non-volatile memory cell that has a select transistor and a memory transistor, the substrate trenching that occurs when the gate of the select transistor and the stacked gate of the memory transistor are initially defined is eliminated by forming the gate of the select transistor and the stacked gate of the memory transistor to have substantially the same step height.
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申请公布号 |
US6184552(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19980118574 |
申请日期 |
1998.07.17 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KALNITSKY ALEXANDER;BERGEMONT ALBERT |
分类号 |
H01L21/8247;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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