Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS,申请号US09/211663-传众专利搜索

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发明名称	Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS
摘要
申请公布号	US6184074(B2)	申请公布日期	2001.02.06
申请号	US09/211663	申请日期	1998.12.15
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
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