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发明名称
Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
摘要
申请公布号
US6184135(B2)
申请公布日期
2001.02.06
申请号
US09/163378
申请日期
1998.09.30
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