发明名称 SUBSTRATE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To correct amt. of deviation of zero point to appropriately control pressure in a vacuum chamber and to prevent defect of treatment of a base caused by change in pressure from being generated by a method wherein a low pressure condition in the vacuum chamber is measured by means of a low pressure side vacuum gauge and in this instance, the measured value by means of the vacuum gauge for control is compared with the set value to detect the deviation of zero point. SOLUTION: In an apparatus for treating a substrate in a vacuum chamber 1, while inner pressure of the vacuum chamber 1 is measured by means of a low pressure side vacuum gauge 5 until the inner pressure of the vacuum chamber 1 is lowered to e.g. 0.01 Pa or lower, the inside of the vacuum chamber 1 is evacuated through an exhaust pipe 3 by means of a vacuum pump 2. In addition, the inner pressure of the vacuum chamber 1 is measured by means of a vacuum gauge 4 for control and this measured value is compared with a set value stored in advance. As the result, when the difference between the measured value and the set value is at most an allowable value, gas is introduced into the inside of the vacuum chamber 1 from a gas inlet pipe 6 and the inner pressure of the vacuum chamber 1 is controlled to a target value by controlling a variable valve 7. Treatment of the substrate is always appropriately performed thereby.
申请公布号 JP2001029772(A) 申请公布日期 2001.02.06
申请号 JP19990211428 申请日期 1999.07.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MINAMIDA YUKIHIRO;YAMANAKA SHIGEO
分类号 G01L21/00;B01J3/00;(IPC1-7):B01J3/00 主分类号 G01L21/00
代理机构 代理人
主权项
地址