发明名称 |
Trench storage dynamic random access memory cell with vertical transfer device |
摘要 |
A trench storage dynamic random access memory cell with vertical transfer device can be formed in a wafer having prepared shallow trench isolation. Vertical transfer device is built as the deep trenches are formed. Using square printing to form shallow trench isolation and deep trenches, allows for scaling of the cell to very small dimensions.
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申请公布号 |
US6184549(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19990296807 |
申请日期 |
1999.04.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HORAK DAVID V.;MA WILLIAM H.;MANDELMAN JACK A. |
分类号 |
H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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