METHOD FOR FORMING GAS BLOW-OUT COUNTER ELECTRODE FOR PLASMA CVD, AND SEMI-CONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a gas blow-out counter electrode and a semiconductor thin film in which undesired films or powders hardly deposit in a plasma CVD device. SOLUTION: A gas blow-out counter electrode arranged opposite to a surface of a substrate on which a film is deposited through the plasma CVD has a plurality of gas blow-out holes 5b, the gas blow-out holes 5b are all of the same polygonal section selected among triangular, quadrilateral and hexagonal shapes, and the gas blow-out holes of the same polygonal section are arranged in a closest packing manner in a surface opposite to the substrate of the counter electrode.