发明名称 |
Thin film transistor and method of producing the same |
摘要 |
On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.
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申请公布号 |
US6184541(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19980205775 |
申请日期 |
1998.12.03 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
OKA HITOSHI;ITO YUTAKA |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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