发明名称 Thin film transistor and method of producing the same
摘要 On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.
申请公布号 US6184541(B1) 申请公布日期 2001.02.06
申请号 US19980205775 申请日期 1998.12.03
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 OKA HITOSHI;ITO YUTAKA
分类号 H01L21/336;H01L29/786;(IPC1-7):H01L29/00 主分类号 H01L21/336
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