发明名称 |
PRODUCTION OF SINGLE CRYSTALLINE THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystalline thin film excellent in crystal orienting properties. SOLUTION: This method for producing a single crystalline thin film comprises a step of locating a target 2 at a position separated and isolated from a substrate 1 so that the principal surface 2a of the target 2 forms an acute angle to the principal surface 1a of the substrate 1 and a step of irradiating the target 2 with laser beams 3 at >=0.8 and <=10 J/cm2 energy density and >=50 and <=280 Hz frequency, thereby scattering a substance constituting the target 2, depositing the substance constituting the target 2 on the principal surface 1a of the substrate 1 and forming the single crystalline thin film.
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申请公布号 |
JP2001031492(A) |
申请公布日期 |
2001.02.06 |
申请号 |
JP19990203351 |
申请日期 |
1999.07.16 |
申请人 |
SUMITOMO ELECTRIC IND LTD;TOKYO ELECTRIC POWER CO INC:THE |
发明人 |
MOKURA SHIYUUJI;FUJINO KOZO;DAIMATSU KAZUYA;IWATA YOSHIHIRO;HONJO SHOICHI;SATO AYAFUMI;ISHII HIDEO |
分类号 |
C30B23/08;C30B29/16;C30B29/22;H01B12/06;H01B13/00;(IPC1-7):C30B23/08 |
主分类号 |
C30B23/08 |
代理机构 |
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地址 |
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