METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide both a method for producing a semiconductor crystal by which the slip dislocation is scarcely caused and the semiconductor crystal having a convex solid-liquid interface can be grown and an apparatus for producing the semiconductor crystal. SOLUTION: This apparatus for producing a semiconductor crystal 12 is obtained by installing a heat insulating part 11 having a thickness of >=1/10 and <1/3 the outside diameter of a crystal growth container 5 between a high- temperature region A and a low-temperature region B of a heating mechanism 2 and setting the gap between a quartz ampul 9 around the crystal growth container 5 and the heat insulating part 11 at <5 mm and is capable of growing the crystal 12 in a state of the solid-liquid interface 13 formed between the crystal 12 and a melt 8 of a raw material for the semiconductor and located in the high-temperature region A.