发明名称 |
Apparatus for recovering impurities from a silicon wafer |
摘要 |
A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.
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申请公布号 |
US6182675(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19980030818 |
申请日期 |
1998.02.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKA JIRO;FUJINO NAOHIKO;HIRANO NORIKO;KOBAYASHI JUNJI;KURAMOTO KAZUO |
分类号 |
G01N1/28;H01L21/00;H01L21/66;(IPC1-7):B08B3/02;B08B3/04 |
主分类号 |
G01N1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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