发明名称 Apparatus for recovering impurities from a silicon wafer
摘要 A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.
申请公布号 US6182675(B1) 申请公布日期 2001.02.06
申请号 US19980030818 申请日期 1998.02.26
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NAKA JIRO;FUJINO NAOHIKO;HIRANO NORIKO;KOBAYASHI JUNJI;KURAMOTO KAZUO
分类号 G01N1/28;H01L21/00;H01L21/66;(IPC1-7):B08B3/02;B08B3/04 主分类号 G01N1/28
代理机构 代理人
主权项
地址