| 摘要 |
The present invention provides a method of forming an isolation region comprising a trench isolation region involved in a semiconductor device. A silicon oxide film is grown on a surface of a trench groove formed within a semiconductor substrate, followed by a deposition of a nitride film material. An oxide film is formed on the silicon oxide film of the wide trench groove region. The nitride film within the trench groove region, so as to form a device isolation film is etched, sequentially, a oxide film is deposited on the entire exposed surface of the trench region, and the oxide film except within the trench groove, is etched by using chemical mechanical polishing (CMP).
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